Wirebonding
Process
Wirebonding, or wire bonding, is the process of
providing electrical connection between the silicon chip and the
external leads of the semiconductor device using very fine
bonding wires. The wire used in wirebonding is usually made either of gold (Au) or aluminum (Al),
although Cu wirebonding
is starting to gain a foothold in the semiconductor
manufacturing industry. There
are two common wirebonding processes: Au ball bonding and Al wedge bonding.
During
gold ball
wire bonding, a gold ball is
first formed by melting
the end of the wire (which is held by a bonding tool known as a
capillary)
through
electronic
flame-off (EFO).
This
free-air ball
(Fig. 1a) has a diameter ranging from 1.5 to
2.5 times the wire diameter. Free
air ball size consistency, controlled by the EFO and the tail length, is
critical in good bonding. For a
discussion on how the melting of the wire affects grain size
distribution and wire strength,
see:
Grain Size
Distribution in Gold Ball Bonds.
The
free-air ball is then brought into contact with the bond pad. Adequate
amounts of
pressure,
heat, and
ultrasonic forces are
then applied to
the ball for a specific amount of time, forming the initial
metallurgical weld between the ball and the bond pad as well as
deforming the ball bond itself into its final shape (Fig. 2).
|
|
Fig 1a.
Photo of a free-air ball prior to ball bond formation
|
Fig 1b.
Wire loop formed to connect the die to the lead finger |
The wire is then run to the
corresponding finger of the leadframe, forming a gradual arc or
"loop"
(Fig. 1b)
between the bond pad and the
leadfinger.
Pressure and ultrasonic forces are applied to the wire to form the
second
bond (known as a
wedge bond,
stitch
bond, or
fishtail
bond and shown in Fig. 3), this time with the leadfinger. The wirebonding machine
or
wirebonder
(see Fig. 5) breaks the wire in preparation for
the next wirebonding cycle by
clamping the wire and raising the capillary.
During
aluminum wedge
wire bonding,
a clamped aluminum wire is brought in contact with the aluminum bond pad.
Ultrasonic
energy
is then applied to the wire for a specific duration while being held
down by a specific amount of force, forming the first
wedge
bond (Fig. 4) between the wire and the bond pad. The wire is then run to
the corresponding lead finger, against which it is again pressed. The
second bond is again formed by applying ultrasonic energy to the wire.
The wire is then broken off by clamping and movement of the wire.
Because it is
non-directional,
gold ball bonding is much faster than aluminum wedge bonding, which is
why it is extensively used in plastic packaging.
Unfortunately,
gold ball bonding on Al bond pads can not be used in hermetic packages,
primarily because the high sealing temperatures (400-450 deg C) used for
these packages tremendously accelerate the formation of Au-Al
intermetallics that can lead to early life failures. Gold ball
bonding on gold bond pads, however, may be employed in hermetic
packages.
Unlike Al-Al
ultrasonic wedge bonding, Au-Al thermosonic ball bonding requires heat to
facilitate the bonding process. The Al bond pad is
harder
than the Au ball bond, making good bonding between them through
purely ultrasonic
means impossible without causing
wire, bond pad, or silicon substrate damage. The application of thermal
energy to the Al bond pads
'softens'
them, promoting the inter-diffusion of Au and Al atoms that ultimately
form the Au-Al bond. Heat
application also improves bonding by removing organic contaminants on
the bond pad surface.
|
|
|
Fig 2.
Photo of a gold ball bond (1st bond) on the bond pad |
Fig 3.
Photo of a gold wedge/stitch bond (2nd bond) on the leadfinger
|
Fig 4. Photo
of an aluminum wedge bond (first bond) on the bond pad |
<Proceed to Bonding
Theory>
<Proceed to
Bonding Failures>
Front-End Assembly
Links:
Wafer Backgrind;
Die Preparation;
Die Attach;
Wirebonding;
Die Overcoat
Back-End Assembly
Links:
Molding;
Sealing;
Marking;
DTFS;
Leadfinish
See Also:
Copper Wirebonding;
Bonding Theory;
Wirebond Metallurgies;
Bonding
Wires; Bonding
Tools;
Bond
Strength Tests;
Bonding Failures; Bond
Lifting;
IC
Manufacturing; Assembly Equipment
HOME
Copyright
©
2001-2006
www.EESemi.com.
All Rights Reserved.