Wirebonding 
      Process
            
                 
         
        
        
        
        
        
 
        
        
        
        
        
        
        
        
        
        Wirebonding, or wire bonding, is the process of
        providing electrical connection between the silicon chip and the
        external leads of the semiconductor device using very fine 
        bonding wires. The wire used in wirebonding is usually made either of gold (Au) or aluminum (Al),
        although Cu wirebonding 
        is starting to gain a foothold in the semiconductor 
        manufacturing industry. There
        are two common wirebonding processes: Au ball bonding and Al wedge bonding.
         
        
        
        
        
                
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        During 
        gold ball 
        wire bonding, a gold ball is 
        first formed by melting 
        the end of the wire (which is held by a bonding tool known as a 
         capillary) 
        through 
        electronic
        flame-off  (EFO). 
        This 
        free-air ball 
        (Fig. 1a) has a diameter ranging from 1.5 to
        2.5 times the wire diameter.  Free
        air ball size consistency, controlled by the EFO and the tail length, is
        critical in good bonding.  For a 
        discussion on how the melting of the wire affects grain size 
        distribution and wire strength, 
        
        see:
        Grain Size 
        Distribution in Gold Ball Bonds.
        
            
         
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        The 
        free-air ball is then brought into contact with the bond pad. Adequate 
        amounts of 
        pressure, 
        heat, and  
        ultrasonic forces are 
        then applied to 
        the ball for a specific amount of time, forming the initial 
        metallurgical weld between the ball and the bond pad as well as 
        deforming the ball bond itself into its final shape (Fig. 2). 
        
            
         
        
        
        
        
        
        
        
        
        
        
        
          
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              Fig 1a. 
        Photo of a free-air ball prior to ball bond formation | 
        
              Fig 1b.  
        Wire loop formed to connect the die to the lead finger | 
        
        
        
            
         
        
        
        The wire is then run to the
        corresponding finger of the leadframe, forming a gradual arc or   
        
        "loop"   
        
        (Fig. 1b) 
        between the bond pad and the   
        
        leadfinger. 
        Pressure and ultrasonic forces are applied to the wire to form the 
        second 
        bond (known as a 
        wedge bond, 
        stitch 
        bond, or 
        fishtail 
        bond and shown in Fig. 3), this time with the leadfinger. The wirebonding machine 
        or 
        
        wirebonder 
        (see Fig. 5) breaks the wire in preparation for
        the next wirebonding cycle by 
        
        clamping the wire and raising the capillary.
        
            
         
        
        During
        
        aluminum wedge 
		wire bonding, 
        a clamped aluminum wire is brought in contact with the aluminum bond pad. 
        Ultrasonic 
        energy 
        is then applied to the wire for a specific duration while being held 
        down by a specific amount of force, forming the first 
        wedge 
        bond (Fig. 4) between the wire and the bond pad. The wire is then run to 
		the corresponding lead finger, against which it is again pressed. The 
		second bond is again formed by applying ultrasonic energy to the wire. 
		The wire is then broken off by clamping and movement of the wire. 
        
            
         
        
        
        Because it is
        
        non-directional, 
		gold ball bonding is much faster than aluminum wedge bonding, which is 
		why it is extensively used in plastic packaging.
         
        
		Unfortunately, 
        gold ball bonding on Al bond pads can not be used in hermetic packages, 
		primarily because the high sealing temperatures (400-450 deg C) used for 
		these packages tremendously accelerate the formation of Au-Al 
		intermetallics that can lead to early life failures.  Gold ball 
		bonding on gold bond pads, however, may be employed in hermetic 
		packages. 
        
      
		
          
		
      
        
        
        
		
        
        Unlike Al-Al 
		ultrasonic wedge bonding, Au-Al thermosonic ball bonding requires heat to 
		facilitate the bonding process. The Al bond pad is 
        
        harder 
		than the Au ball bond, making good bonding between them through
        
        purely ultrasonic
        
        means impossible without causing 
		wire, bond pad, or silicon substrate damage. The application of thermal 
		energy to the Al bond pads
        
        'softens' 
		them, promoting the inter-diffusion of Au and Al atoms that ultimately 
		form the Au-Al bond.  Heat 
		application also improves bonding by removing organic contaminants on 
		the bond pad surface. 
        
        
        
        
        
        
       
        
        
        
        
        
      
        
                       
         
        
        
          
            
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              Fig 2. 
              Photo of a gold ball bond (1st bond) on the bond pad | 
        Fig 3. 
        Photo of a gold wedge/stitch bond  (2nd bond) on the leadfinger | 
        Fig 4. Photo 
              of an aluminum wedge bond (first bond) on the bond pad | 
          
         
        
        
            
         
            
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        <Proceed to Bonding 
        Theory>
            
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        
        <Proceed to 
        Bonding Failures> 
        
        
        
        
        
        
        
        
        
        
        
                
      
      
      
      
      
             
  
      
      
      
      
      
      
      
      
      
      Front-End Assembly 
      Links:  
        
        Wafer Backgrind;  
        Die Preparation;  
        Die Attach;  
        Wirebonding;  
        Die Overcoat
      
      Back-End Assembly 
      Links:  
        
        Molding;  
        Sealing;  
        Marking;  
        DTFS;  
        Leadfinish          
        
      
      See Also:  
        
      Copper Wirebonding;  
        Bonding Theory; 
        Wirebond Metallurgies;  
      Bonding 
        Wires;  Bonding 
        Tools;
        
        Bond 
        Strength Tests;  
        Bonding Failures;  Bond 
        Lifting;  
      IC 
        Manufacturing;  Assembly Equipment
        
        
        
        
        
        
        
        
        
        
        
      
              
        
            
            
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