|
Screen |
Class-S |
Class-B |
|
Mil
Method |
Reqt. |
Mil
Method |
Reqt. |
|
3.1.1.
Wafer Lot Acceptance |
5007 |
All lots |
N/A |
--- |
|
3.1.2
Non-destructive Bond Pull |
2023 |
100% |
N/A |
--- |
|
3.1.3
Internal Visual Inspection |
2010,
Test Condition A |
100% |
2010,
Test Condition B |
100% |
|
3.1.4
Temperature Cycling |
1010,
Test Condition C |
100% |
1010,
Test Condition C |
100% |
|
3.1.5
Constant Acceleration |
2001,
Test Condition E |
100% |
2001,
Test Condition E |
100% |
|
3.1.6
Visual Inspection |
for
catastrophic failures |
100% |
for
catastrophic failures |
100% |
|
3.1.7
Particle Impact Noise Detection (PIND) |
2020,
Test Condition A |
100% |
N/A |
--- |
|
3.1.8
Serialization |
--- |
100% |
N/A |
--- |
|
3.1.9
Pre-Burn-in Electrical Parameters |
per
device specifications |
100% |
per
device specifications |
100% |
|
3.1.10
Burn-in |
1015,
240H at 125C min. |
100% |
1015,
160H at 125C min. |
100% |
|
3.1.11
Interim Post-Burn-in Electrical Parameters |
per
device specifications |
100% |
N/A |
--- |
|
3.1.12
Reverse-bias Burn-in |
1015,
Test Cond. A or C; 72H/150C |
100% |
N/A |
--- |
|
3.1.13
Interim Post-Burn-in Electrical Parameters |
per
device specifications |
100% |
per
device specifications |
100% |
|
3.1.14
Percent Defective Allowable (PDA) Computation |
5%
over-all; 3% for functional pa-rameters at 25C |
All lots |
5% |
All lots |
|
3.1.15
Final Electrical Tests
a.
Static Tests
b.
Dynamic/Functional Tests
c.
Switching Tests |
per
device specifications |
100% |
per
device specifications |
100% |
|
3.1.16
Seal Tests
a. Fine
Leak
b. Gross
Leak |
1014 |
100% |
1014 |
100% |
|
3.1.17
Radiographic Test |
2012,
two views |
100% |
N/A |
--- |
|
3.1.18
Qualification or QCI Test Sampling |
5005 |
per Mil
Method 5005 |
5005 |
per Mil
Method 5005 |
|
3.1.19
External Visual Inspection |
2009 |
100% or
116(0) (see notes in Mil Method 5004) |
2009 |
100% or
116(0)
(see notes in Mil Method 5004) |
|
3.1.20
Radiation Latch-up |
1020 |
100% |
1020 |
100% |
