|
Properties |
Si |
Ge |
GaAs |
|
Atoms/cm3 |
5.0 x 1022 |
4.42 x
1022 |
4.42 x
1022 |
|
Atomic
Weight |
28.09 |
72.60 |
144.63 |
|
Breakdown Field |
approx.
3 x 105 |
approx.
1 x 105 |
approx.
4 x 105 |
|
Crystal
Structure |
Diamond |
Diamond |
Zincblende |
|
Density
(g/cm3) |
2.328 |
5.3267 |
5.32 |
|
Dielectric Constant |
11.9 |
16.0 |
13.1 |
|
Effective Density of States in the Conduction Band, Nc (cm-3) |
2.8 x 1019 |
1.04 x
1019 |
4.7 x 1017 |
|
Effective Density of States in the Valence Band, Nv (cm-3) |
1.04 x
1019 |
6.0 x 1018 |
7.0 x 1018 |
|
Electron
Affinity (V) |
4.05 |
4.0 |
4.07 |
|
Energy
Gap at 300K (eV) |
1.12 |
0.66 |
1.424 |
|
Intrinsic Carrier Concentration (cm-3) |
1.45 x
1010 |
2.4 x 1013 |
1.79 x
106 |
|
Intrinsic Debye Length (microns) |
24 |
0.68 |
2250 |
|
Intrinsic Resistivity (ohm-cm) |
2.3 x 105 |
47 |
108 |
|
Lattice
Constant (angstroms) |
5.43095 |
5.64613 |
5.6533 |
|
Linear
Coefficient of Thermal Expansion,
ΔL/L/ΔT
(1/deg C) |
2.6 x 10-6 |
5.8 x 10-6 |
6.86 x
10-6 |
|
Melting
Point (deg C) |
1415 |
937 |
1238 |
|
Minority
Carrier Lifetime (s) |
2.5 x 10-3 |
approx.
10-3 |
approx.
10-8 |
|
Mobility
(Drift)
(cm2/V-s)
µn,
electrons |
1500 |
3900 |
8500 |
|
Mobility
(Drift)
(cm2/V-s)
µp, holes |
475 |
1900 |
400 |
|
Optical
Phonon Energy (eV) |
0.063 |
0.037 |
0.035 |
|
Phonon
Mean Free Path (angstroms) |
76
(electron)
55
(hole) |
105 |
58 |
|
Specific
Heat
(J/g-deg
C) |
0.7 |
0.31 |
0.35 |
|
Thermal
Conductivity at 300 K
(W/cm-degC) |
1.5 |
0.6 |
0.46 |
|
Thermal
Diffusivity (cm2/sec) |
0.9 |
0.36 |
0.24 |
|
Vapor
Pressure (Pa) |
1 at
1650 deg C;
10-6
at 900 deg C |
1 at
1330 deg C;
10-6
at 760 deg C |
100 at
1050 deg C;
1 at 900
deg C |
