Mechanical
Specifications for Silicon Wafers
Silicon wafers, especially those used in VLSI manufacturing, must adhere
to stringent electrical, mechanical,
chemical, and surface
specifications. Below are the most common
mechanical specifications
for silicon wafers:
1)
Crystal Growth and Doping Process
-
specifies the wafer's single
crystal growing process, i.e., whether
CZ or FZ
- specifies
the wafer's doping process, e.g., ion implantation, etc.
2)
Wafer Diameter
-
specifies the diameter of the wafer (excluding flats)
- the
diameter specification is given with high precision to facilitate
automated wafer handling; example: 150 +/- 0.2 mm.
- it is
usually measured using a ring template as per ASTM Std F-613
3)
Wafer
Thickness
-
specifies the thickness of the wafer
- wafer
thickness is measured at the center of the wafer with a wafer thickness
gauge
-
wafer
thickness is also an important parameter since a very thin wafer is
prone to warpage or breakage while a very thick wafer may not allow
processing in all wafer fab equipment
4)
Total
Thickness Variation (TTV)
-
specifies the difference between the maximum and minimum values of wafer
thickness
- excessive
thickness variations can result in automated processing problems,
especially with respect to mechanical handling and photolithographic
processes
- TTV
is measured using a non-contact thickness gauge
5)
Bow
-
specifies the concavity of
the wafer due to sawing or the deformation of the wafer centerline due
to thermal processing
- bow
is a bulk property (and not just a surface property) expressed in
microns, and can be measured per ASTM Std F-534-84
6)
Warp
-
specifies the difference between the minimum and maximum distance of the
wafer center line from a reference plane
- warp, which
is also a bulk property of the wafer, takes
into account both concave and convex deviations of the wafer
- warp
can be measured using ASTM Std F-657-80
7)
Flat
Dimensions
-
specifies the precise lengths and orientations of the wafer flats
8)
Edge Contour
-
specifies the rounding of wafer edges;
- wafer edges
are contoured to reduce chipping and film build-up
- edge
contour is measured by comparison with a template
9)
Laser
Markings
-
specifies any markings made by laser on the surface of the wafer
10) Other Mechanical Attributes
-
specifies the presence of attributes like chip-outs and indents on the
wafer
- chip-outs
are regions of missing silicon that do not go all the way through the
slice while indents are regions of missing silicon that go all the way
through the slice
See
also:
Specifications for Si Wafers;
Wafers for Wafer Fab;
Single Crystal Growth
Primary Reference:
Silicon Processing for the Vlsi Era: Process Technology
HOME
Copyright
©
2005
EESemi.com.
All Rights Reserved.