Polysilicon
Doping Techniques
There
are three (3) commonly used techniques for
doping polysilicon.
These are: 1) diffusion doping; 2) ion implantation; and 3) in-situ
doping. Below are brief descriptions of these three polysilicon doping
techniques.
Diffusion Doping:
1)
Diffusion
doping is generally done at a relatively high temperature (900-1000 deg
C).
2) It
involves the growing or deposition of a highly-doped glass on the
undoped polysilicon. This doped glass will serve as the source of
dopants that will diffuse into the polysilicon material.
3) The
high-temperature environment of diffusion doping not only promotes
dopant diffusion from the source, but also anneals the polysilicon
material.
4)
Diffusion doping's advantage is its ability to introduce very high
concentrations of dopants into the poly-Si layer, attaining low levels
of resistivity. The high processing temperature and its tendency to
increase surface roughness are its drawbacks.
Ion Implantation:
1)
Ion implantation
deposits
dopants into
the poly-Si layer by directly
bombarding it
with
high-energy ions
of the
dopant
species.
2) Since ion
implantation has destructive effects, it is followed by an annealing
step that repairs the lattice disturbances and activates the implanted
dopants.
3) The
advantage of ion implantation is its ability to control dopant dosage
with high precision. However, it can not attain the low
resistivities achievable by diffusion doping, i.e., even heavily doped
ion-implanted poly-Si layers exhibit 10X the resisitivity exhibited by
diffusion-doped layers.
4)
Ion-implanted polysilicon layers are often used in applications where
high conductivity is not required, such as being employed as high-value
load resistors in circuits.
In-situ Doping:
1)
In-situ doping refers to the doping technique wherein the dopants are
introduced to the poly-si at the same time the poly-si layer is being
deposited.
2)
In-situ doping involves the addition of dopant gases such as phosphine
and diborane to the CVD
reactant gases used in poly-si deposition.
3)
In-situ doping is not a simple process, since the introduction of the
dopant gases complicates the control of layer thickness, dopant
uniformity, and deposition rate.
4)
Adding dopants during deposition also affects the physical properties of
the poly-si layer, such as the grain size and grain orientation.
See
also:
Polysilicon;
Polysilicon Deposition
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