TO-66 Package

                                                  

The TO-66 or TO66 is a type of 'metal can' package that is capable of high-power dissipation commonly used by power transistors, SCR's and other high-power semiconductor devices.

   

The TO-66 is made entirely of metal, with the microchip mounted on the die pad of its metal can base and then covered with a metal cap. Using the holes at the ends of the TO-66 package base, larger heat sinks may be screwed onto the package to increase its power handling capability. If necessary, the heat sink may be electrically isolated from the TO-66 package using mica or ceramic insulator pads that are inserted between the TO-66 body and the heat sink.  The TO-66 is very similar to the TO-3, but it is smaller than the latter.

  

A typical power transistor packaged in a TO-66 package has two protruding terminals (one for the base and the other for the emitter), with the collector using the TO-66's body itself as its terminal for direct thermal conduction to the heat sink.

   

Table 1. Properties of a Typical TO-66

Base Size

(Length x Width x Thickness)

Cap

Diameter

Cap

Height

Lead Length

Lead Pitch

34 mm x 20 mm x 1.6 mm

12.4 mm

5.7 mm

9.1 mm

5 mm

   

Figure 1.  Top and bottom views of a two-lead TO-66 Package

      

See more TO Package Types

See more IC Package Types

   

HOME

                       

Copyright © 2008 www.EESemi.com. All Rights Reserved.